I have a technical paper to write, the topic is on Gallium Nitride Semiconductors. I already wrote the outlines for the paper (attached), it should help you to konw what to focuc on.
the technical paper must be singled spaced and 8 pages maximum.
The following carteria must be met:
1.Format: abstract, introduction, material properties, comparisons, applications, processing, testing, conclusions.
2.Do not include Table of Contents; not necessary for a paper that is 8 pages maximum.3.Avoid the use of quotes; Too many quotes, “copy/paste”, not student’s work.
4.Appropriate Technical content; the paper is not an infomercial with superficial content. The paper is not significantly beyond the scope of the course and obviously not the student’s work.
5.Organization of paper; coherent sections, integrated paper; avoid chunks of text with no section headings;
6.Start early, so paper is not a rough draft done at the last minute.
7.Quality of research – use multiple relevant sources.
8.Figures and tables are included, relevant to topic, formatted properly (numbered and captioned).
9.Figures are discussed in text.
10.Good quality photos/images/tables are included and are not blurry.
11.References – proper format, consistent format, and cited throughout text; 5 minimum, not including course textbook.
12.Approved topic, submission of term paper.
13.Quality of analysis or summary; student appears to understand what is being explained.
14.Interesting or informative.
15.Conscientious effort is apparent in final result.
16.Focus of paper is on materials and engineering.
if you can fafil all the requarments then I will assign you
The technical paper is going in be about Gallium Nitride Semiconductors technology. The paper will have a various sections regarding this topic, starting from history of Gallium Nitride chemical compound to being one of the main materials in the process of making the semiconductor.
The choices of making a semiconductor is mostly limited to three materials Silicon, Germanium, gallium arsenide and Gallium Nitride.
In the early stages, most commercial semiconductor devices used Germanium, it is rarer and more expensive than Silicon and has no signified advantages. The second most common modern material is Gallium Arsenide, GaAs. It could have a degree of control over its properties by varying the relative amount of Gallium and Arsenic. Gallium nitride has many useful properties that include a large direct gap, high electrical and thermal conductivities, and nearly the hardness of sapphire. at -100°CGaN start decomposing, alsoit can have high electron velocities and showacoustoelectric effects.
The process of making any semiconductor consists of seven steps. Oxide and Nitride film deposition.2) Pattern formation. 3) Isolation formation. 4) Gate formation. 5) Contact formation.6) Interconnect formation.7) Prove testing.When building a field-effect transistor, there is a choice of either Silicon or Gallium Nitride.
GaN could be used in the making of large display to provide a better energy-efficiency. Room temperature gallium nitride based lasers can be very efficient compared to previous leaser technology, laser application can be seen in CD, DVD and opto-magnetic memories. Wireless communications systems can benefit fromGaN when making Microwave amplifiers to translate into better reception on mobile phones.
The paper will go over the wide range of applications of Gallium Nitride Semiconductors such as wireless devices and highly accurate motion sensors for self-driving car. Further information on the other alternative of semiconductors. GaN transistors have several benefits over silicon.
References:  Takahashi, Dean. “Move over, silicon. Gallium nitride chips are taking over.” venturebeat. Published byDean Takahashi, 2 April, 2015. Web. 15 September 2015 <http://venturebeat.com/2015/04/02/move-over-silicon-gallium-nitride-chips-are-taking-over/>
 Lesurf, Jim. “Semiconductor Materials.” st-andrew. Published by J. C. G. Lesurf, 1995-2006, Web. 15 September 2015 <https://www.st-andrews.ac.uk/~www_pa/Scots_Guide/info/comp/conduct/semicond/semimat/semimat.htm
 D. Emin, T. Aselage, C. Wood. ” Properties of Gallium Nitride.” MRS Online Proceedings Library. Published by Materials Research Society, 1987. Web. 15 September 2015 <http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8150486&fileId=S1946427400472714#>
 “Semiconductor Manufacturing process” Tokyo Electronics. Published by Tokyo Electronics Limited, 1996-2015. Web. 15 September 2015 <http://www.tel.com/product/spe/making/index.htm>
 Eastman, Lester F., Mishra, Umesh K, “The toughest transistor yet [GaN transistors]”, IEEE Xplore Digital Library.Published by Spectrum, IEEE. 07 August 2002.Web. 15 September 2015<http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=999791&newsearch=true&queryText=BY%20LESTER%20F.%20EASTMAN%20Cornell%20University%20.AND.%20UMESH%20K.%20MISHRA>
Topic (title of term paper)
Gallium nitride semiconductors
Abstract (go back and do this after paper is finished)
The idea behind Gallium Nitride, the applications of it. How to manufacture it. The components of it. Is there more than one form of the same material?What are the other similar materials? How does it work?
“Silicon chips have had a decades-long run as the foundation for modern electronics. But a new kind of chip, based on the compound material gallium nitride (GaN), promises to unseat silicon because it has higher performance, less power consumption, and lower cost.”
The history of Gallium Nitride.
What is the motivation of Gallium Nitride.
What was before Gallium Nitride.
The components of Gallium Nitride.
The process of making Gallium Nitride.